IXTA02N250HV
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 2500V 0.2A TO263
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Buying Options
Total Price: USD $10.56
Unit Price: USD $10.56
≥1 USD $10.56
≥10 USD $8.548672
≥100 USD $8.04584
≥500 USD $7.291539
≥1000 USD $6.688106
Inventory: 249
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Pulsed Drain Current-Max (IDM) 0.6A
Drain to Source Breakdown Voltage 2.5kV
Drain Current-Max (Abs) (ID) 0.2A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 200mA
Turn-Off Delay Time 32 ns
Fall Time (Typ) 33 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 2500V
Rise Time 19ns
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Input Capacitance (Ciss) (Max) @ Vds 116pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 450 Ω @ 50mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 19 ns
Case Connection DRAIN
Power Dissipation 83W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 83W Tc
Number of Channels 1
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 1.770002g
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 17 Weeks
Alternative Model
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