Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage -500V
Power Dissipation-Max 180W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) Not Applicable
Operating Temperature -55°C~150°C TJ