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IXFX21N100F

IXYS
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 21A PLUS247-3
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Avalanche Energy Rating (Eas) 2500 mJ
Pulsed Drain Current-Max (IDM) 84A
Drain to Source Breakdown Voltage 1kV
Drain-source On Resistance-Max 0.5Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 21A
Turn-Off Delay Time 55 ns
Fall Time (Typ) 15 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 16 ns
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Rds On (Max) @ Id, Vgs 500m Ω @ 10.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 500W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 500W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Series HiPerRF?
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-247-3
Mounting Type Through Hole

Supply Chain

Factory Lead Time 10 Weeks

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