Operating Temperature -55°C~150°C TJ
Series HiPerFET?, TrenchT2?
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 890W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 11700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 150A Tc
Gate Charge (Qg) (Max) @ Vgs 177nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 150A
Drain-source On Resistance-Max 0.015Ohm
Pulsed Drain Current-Max (IDM) 375A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 1500 mJ