IXFP8N85X
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 850V 8A TO220AB
PDF
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Buying Options
Total Price: USD $2.83
Unit Price: USD $2.8336
≥1 USD $2.8336
≥10 USD $2.37952
≥100 USD $1.925088
≥500 USD $1.711195
≥1000 USD $1.465209
≥3000 USD $1.379646
Inventory: 329
Minimum: 1
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Technical Details
Technical
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 850V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Input Capacitance (Ciss) (Max) @ Vds 654pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Rds On (Max) @ Id, Vgs 850m Ω @ 4A, 10V
FET Type N-Channel
Power Dissipation-Max 200W Tc
Reach Compliance Code compliant
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HiPerFET?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-220-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 19 Weeks
Alternative Model
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