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NVMFS5830NLWFT3G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET Pwr MOSFET 40V 185A 2.3mOhm SGL N-CH
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Technical Details

Supply Chain

Factory Lead Time 38 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.8W Ta 158W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 29A Ta
Gate Charge (Qg) (Max) @ Vgs 113nC @ 10V
Rise Time 32ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0036Ohm
DS Breakdown Voltage-Min 40V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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