Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form UNSPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 700W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 12200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 340A Tc
Gate Charge (Qg) (Max) @ Vgs 490nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 200 ns
Continuous Drain Current (ID) 340A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 70V