Pulsed Drain Current-Max (IDM) 292A
Drain to Source Breakdown Voltage 300V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 73A
Turn-Off Delay Time 100 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Current - Continuous Drain (Id) @ 25°C 73A Tc
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V
Vgs(th) (Max) @ Id 4V @ 8mA
Rds On (Max) @ Id, Vgs 45m Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 500W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Terminal Form UNSPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Not For New Designs
Operating Temperature -55°C~150°C TJ