Avalanche Energy Rating (Eas) 3000 mJ
Pulsed Drain Current-Max (IDM) 100A
Drain to Source Breakdown Voltage 900V
Drain-source On Resistance-Max 0.33Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 25A
Turn-Off Delay Time 130 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Input Capacitance (Ciss) (Max) @ Vds 10800pF @ 25V
Vgs(th) (Max) @ Id 5V @ 8mA
Rds On (Max) @ Id, Vgs 330m Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 600W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ