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IRF6722MTRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric MP
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 13A DIRECTFET
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MP
Number of Pins 5
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET?
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.3W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.7m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 7.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.1 ns
Turn-Off Delay Time 9.5 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0077Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 82 mJ

Dimensions

Height 506μm
Length 6.35mm
Width 5.05mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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