IXFK21N100F
RoHS
/
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
IXYS RF IXFK21N100F RF FET Transistor, 1 kV, 21 A, 500 W, 500 kHz, TO-264
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Buying Options
Total Price: USD $33.92
Unit Price: USD $33.91975
≥1 USD $33.91975
≥10 USD $27.8312
≥100 USD $26.96195
≥500 USD $26.09175
≥1000 USD $25.2225
Inventory: 1153
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Avalanche Energy Rating (Eas) 2500 mJ
Pulsed Drain Current-Max (IDM) 84A
Drain to Source Breakdown Voltage 1kV
Drain-source On Resistance-Max 0.5Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 21A
Turn-Off Delay Time 55 ns
Fall Time (Typ) 15 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 16 ns
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Rds On (Max) @ Id, Vgs 500m Ω @ 10.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 500W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 500W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Series HiPerRF?
Published 2002
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount NO
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Supply Chain
Factory Lead Time 10 Weeks
Alternative Model
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