2SK1339-E
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 900V 3A TO-3P
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Buying Options
Total Price: USD $4.52
Unit Price: USD $4.521231
≥1 USD $4.521231
≥10 USD $4.265315
≥100 USD $4.02389
≥500 USD $3.796121
≥1000 USD $3.581244
Inventory: 1147
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 80W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7 Ω @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 425pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Rise Time 40ns
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 7Ohm
Pulsed Drain Current-Max (IDM) 7A
DS Breakdown Voltage-Min 900V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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