IXFH320N10T2
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 100V 320A 3-Pin(3+Tab) TO-247
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Buying Options
Total Price: USD $59.07
Unit Price: USD $59.0653
≥1 USD $59.0653
≥10 USD $48.46425
≥100 USD $46.94995
≥500 USD $45.43565
≥1000 USD $43.9204
≥3000 USD $39.3775
Inventory: 2810
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55?°C~175?°C TJ
Packaging Tube
Published 2010
Series HiPerFETa??, TrenchT2a??
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1000W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m ?? @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250??A
Input Capacitance (Ciss) (Max) @ Vds 26000pF @ 25V
Current - Continuous Drain (Id) @ 25?°C 320A Tc
Gate Charge (Qg) (Max) @ Vgs 430nC @ 10V
Rise Time 46 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ?±20V
Fall Time (Typ) 177 ns
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) 320A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0035Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 800A
Avalanche Energy Rating (Eas) 1500 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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