IXFB82N60Q3
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
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Buying Options
Total Price: USD $36.79
Unit Price: USD $36.7928
≥1 USD $36.7928
≥10 USD $30.833792
≥100 USD $28.778112
Inventory: 31
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 264
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series HiPerFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1560W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56kW
Case Connection DRAIN
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 41A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 82A Tc
Gate Charge (Qg) (Max) @ Vgs 275nC @ 10V
Rise Time 300ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 82A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.075Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 4000 mJ
Dimensions
Height 26.59mm
Length 20.29mm
Width 5.31mm
Compliance
RoHS Status ROHS3 Compliant
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