IXFA4N100Q
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 4A TO-263
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Buying Options
Total Price: USD $2.65
Unit Price: USD $2.6512
≥1 USD $2.6512
≥10 USD $2.50113
≥100 USD $2.35956
≥500 USD $2.226
≥1000 USD $2.1
≥3000 USD $1.98113
Inventory: 4155
Minimum: 1
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Technical Details
Technical
Drain to Source Breakdown Voltage 1kV
Avalanche Energy Rating (Eas) 700 mJ
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 4A
Turn-Off Delay Time 32 ns
Fall Time (Typ) 18 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 15 ns
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Rds On (Max) @ Id, Vgs 3 Ω @ 2A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 150W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 4
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Resistance 3Ohm
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series HiPerFET?
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 30 Weeks
Alternative Model
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