NTJS4151PT1
RoHS
/
Package SOT-363-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 3.3A SOT-363
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Rds On Max 60 mΩ
Drain to Source Resistance 180mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Input Capacitance 850pF
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 3.3A
Turn-Off Delay Time 2.7 ns
Polarity/Channel Type P-CHANNEL
Drain to Source Voltage (Vdss) 20V
Transistor Application SWITCHING
Power Dissipation 1W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 6
Time@Peak Reflow Temperature-Max (s) 30
Current Rating -3.3A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 1W
Voltage - Rated DC -20V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2006
Packaging Cut Tape (CT)
Physical
Number of Pins 6
Surface Mount YES
Package / Case SOT-363-6
Alternative Model
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