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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 18A TO-220AB
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Total Price: USD $976.5
Unit Price: USD $0.3255
≥3000 USD $0.3255
Inventory: 3854
Minimum: 3000
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Technical Details

Compliance

Lead Free Contains Lead, Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC

Dimensions

Width 4.69mm
Length 10.5156mm
Height 15.24mm

Technical

Nominal Vgs 2 V
Recovery Time 90 ns
Avalanche Energy Rating (Eas) 68 mJ
Dual Supply Voltage 55V
Pulsed Drain Current-Max (IDM) 72A
Drain to Source Breakdown Voltage 55V
Gate to Source Voltage (Vgs) 16V
JEDEC-95 Code TO-220AB
Threshold Voltage 2V
Continuous Drain Current (ID) 18A
Turn-Off Delay Time 20 ns
Fall Time (Typ) 29 ns
Vgs (Max) ±16V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Rise Time 74 ns
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 60m Ω @ 11A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 7.1 ns
Case Connection DRAIN
Power Dissipation 45W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 45W Tc
Number of Elements 1
Lead Pitch 2.54mm
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 17A
Peak Reflow Temperature (Cel) 250
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 55V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Resistance 60mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2002
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount PCB, Through Hole

Supply Chain

Factory Lead Time 12 Weeks

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