2N3715
RoHS
/
Package TO-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN GP Power
PDF
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Buying Options
Total Price: USD $20.14
Unit Price: USD $20.1362
≥1 USD $20.1362
≥10 USD $16.5224
≥100 USD $16.0056
≥500 USD $15.48975
≥1000 USD $14.97295
Inventory: 61
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
DC Current Gain-Min (hFE) 30
hFE Min 50
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 80V
Frequency - Transition 4MHz
Collector Emitter Saturation Voltage 800mV
Transition Frequency 4MHz
Collector Emitter Breakdown Voltage 60V
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 800mV
Gain Bandwidth Product 4MHz
Transistor Application SWITCHING
Case Connection COLLECTOR
Power Dissipation-Max 150W
Configuration SINGLE
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-MBFM-P2
Pin Count 2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form PIN/PEG
Terminal Position BOTTOM
Subcategory Other Transistors
HTS Code 8541.29.00.95
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 2
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2016
Physical
Package / Case TO-3
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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