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IRLSL4030PBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 180A TO-262
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Buying Options
Total Price: USD $4.56
Unit Price: USD $4.56475
≥1 USD $4.56475
≥10 USD $3.7449
≥100 USD $3.62805
≥500 USD $3.5112
≥1000 USD $3.39435
Inventory: 1097
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.826mm
Length 10.668mm
Height 9.652mm

Technical

Nominal Vgs 2.5 V
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 180A
Turn-Off Delay Time 110 ns
Fall Time (Typ) 170 ns
Vgs (Max) ±16V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 330 ns
Gate Charge (Qg) (Max) @ Vgs 130nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Input Capacitance (Ciss) (Max) @ Vds 11360pF @ 50V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 4.3m Ω @ 110A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 74 ns
Power Dissipation 370W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 370W Tc
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Resistance 4.3Ohm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2009
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 12 Weeks

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