RUE002N02TL
RoHS 
RoHS compliant
RoHS compliantPackage SC-75, SOT-416
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V .2A EMT3
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Buying Options
Total Price: USD $0.4
Unit Price: USD $0.396
≥1 USD $0.396
≥10 USD $0.27456
≥100 USD $0.138512
≥500 USD $0.112974
≥1000 USD $0.083811
Inventory: 5379
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Power Dissipation-Max 150mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 200mA, 2.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 2.5V
Vgs (Max) ±8V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 1.4Ohm
Drain to Source Breakdown Voltage 20V
Dimensions
Height 700μm
Length 1.6mm
Width 800μm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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