IRLSL3034PBF
RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 195A TO262
PDF
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Buying Options
Total Price: USD $6.36
Unit Price: USD $6.36215
≥1 USD $6.36215
≥10 USD $5.22025
≥100 USD $5.05685
≥500 USD $4.8944
≥1000 USD $4.731
Inventory: 1132
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package TO-262
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Power Dissipation 375W
Turn On Delay Time 65 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7mOhm @ 195A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10315pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 162nC @ 4.5V
Rise Time 827ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 355 ns
Turn-Off Delay Time 97 ns
Continuous Drain Current (ID) 195A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 10.315nF
Drain to Source Resistance 1.7mOhm
Rds On Max 1.7 mΩ
Dimensions
Height 9.65mm
Length 10.668mm
Width 4.826mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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