Resistor - Emitter Base (R2) 10 k Ω
Resistor - Base (R1) 2.2 k Ω
Frequency - Transition 260MHz
Max Breakdown Voltage 12V
Transition Frequency 260MHz
Collector Emitter Breakdown Voltage 12V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA 2V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 300mV
Transistor Type NPN - Pre-Biased
Polarity/Channel Type NPN
Transistor Application SWITCHING
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 150mW
Subcategory BIP General Purpose Small Signal
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish TIN COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)