IRLR3636TRLPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 50A DPAK
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Buying Options
Total Price: USD $1.66
Unit Price: USD $1.6632
≥1 USD $1.6632
≥10 USD $1.37808
≥100 USD $1.097096
≥500 USD $0.928312
≥1000 USD $0.787653
Inventory: 1169
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 143W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 143W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3779pF @ 50V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 4.5V
Rise Time 216ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 69 ns
Continuous Drain Current (ID) 50A
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.0083Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 396A
Avalanche Energy Rating (Eas) 170 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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