Max Junction Temperature (Tj) 150┬?C
Pulsed Drain Current-Max (IDM) 22A
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) -3.7A
Turn-Off Delay Time 588 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Current - Continuous Drain (Id) @ 25┬?C 3.7A Ta
Input Capacitance (Ciss) (Max) @ Vds 633pF @ 10V
Vgs(th) (Max) @ Id 1.2V @ 250╬╝A
Rds On (Max) @ Id, Vgs 65m ╬? @ 3.7A, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 350 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.3W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature HIGH RELIABILITY
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55┬?C~150┬?C TJ