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IXTH6N90

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 900V 6A TO-247
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Buying Options
Total Price: USD $3.39
Unit Price: USD $3.38865
≥1 USD $3.38865
≥10 USD $2.78065
≥100 USD $2.69325
≥500 USD $2.6068
≥1000 USD $2.5194
Inventory: 17537
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

Pulsed Drain Current-Max (IDM) 24A
Drain to Source Breakdown Voltage 900V
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-247AD
Continuous Drain Current (ID) 6A
Turn-Off Delay Time 100 ns
Fall Time (Typ) 60 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 40ns
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 1.8 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 180W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 180W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 35
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Resistance 4.5Ohm
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 8 Weeks

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