Avalanche Energy Rating (Eas) 180 mJ
Pulsed Drain Current-Max (IDM) 16A
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 3.9A
Turn-Off Delay Time 6.9 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Current - Continuous Drain (Id) @ 25°C 3.9A Ta
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Rds On (Max) @ Id, Vgs 45m Ω @ 3.9A, 10V
Transistor Application SWITCHING
Turn On Delay Time 7.4 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Ta
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature HIGH RELIABILITY, AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ