IRFB4233PBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 230V 56A TO-220AB
PDF
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Buying Options
Total Price: USD $1.59
Unit Price: USD $1.5922
≥1 USD $1.5922
≥10 USD $1.30625
≥100 USD $1.2654
≥500 USD $1.22455
≥1000 USD $1.18465
Inventory: 1126
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.82mm
Length 10.6426mm
Height 16.51mm
Technical
Nominal Vgs 5 V
Rds On Max 37 mΩ
Drain to Source Resistance 37mOhm
Input Capacitance 5.51nF
Dual Supply Voltage 276V
Drain to Source Breakdown Voltage 230V
Gate to Source Voltage (Vgs) 30V
Threshold Voltage 5V
Continuous Drain Current (ID) 56A
Turn-Off Delay Time 51 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 230V
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Input Capacitance (Ciss) (Max) @ Vds 5510pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 37mOhm @ 28A, 10V
FET Type N-Channel
Turn On Delay Time 31 ns
Power Dissipation 370W
Element Configuration Single
Power Dissipation-Max 370W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -40°C
Max Operating Temperature 175°C
Termination Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2007
Packaging Tube
Operating Temperature -40°C~175°C TJ
Physical
Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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