IRLHS6242TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 6-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 10A PQFN
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Buying Options
Total Price: USD $2.49
Unit Price: USD $2.489
≥1 USD $2.489
≥10 USD $2.0425
≥100 USD $1.97885
≥500 USD $1.91425
≥1000 USD $1.8506
Inventory: 1097
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerVDFN
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 1.98W Ta 9.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 9.6W
Case Connection DRAIN
Turn On Delay Time 5.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.7m Ω @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 1110pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta 12A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 88A
Nominal Vgs 800 mV
Dimensions
Height 950μm
Length 2.1mm
Width 2.1mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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