IRLHM630TR2PBF
RoHS
/
Package 8-VQFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 21A PQFN
PDF
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Buying Options
Total Price: USD $6.41
Unit Price: USD $6.41155
≥1 USD $6.41155
≥10 USD $5.2611
≥100 USD $5.09675
≥500 USD $4.9324
≥1000 USD $4.76805
Inventory: 1248
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad
Number of Pins 8
Technical
Packaging Cut Tape (CT)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2.7W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation 37W
Turn On Delay Time 9.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5m Ω @ 20A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 3170pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 62nC @ 4.5V
Rise Time 32ns
Fall Time (Typ) 43 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Recovery Time 30 ns
Nominal Vgs 800 mV
Dimensions
Height 990.6μm
Length 3.2766mm
Width 3.3mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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