IRFTS8342TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 8.2A 6TSOP
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Inventory: 7169
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 19MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 7.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.2A Ta
Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 4.5V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.2 ns
Turn-Off Delay Time 9.1 ns
Continuous Drain Current (ID) 8.2A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 80A
Recovery Time 12 ns
Nominal Vgs 1.8 V
Dimensions
Height 1.3mm
Length 3mm
Width 1.75mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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