IXTP1N100
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 1.5A TO-220AB
PDF
/
Buying Options
Total Price: USD $3.22
Unit Price: USD $3.2224
≥1 USD $3.2224
≥10 USD $2.64385
≥100 USD $2.5612
≥500 USD $2.47855
≥1000 USD $2.3959
Inventory: 702
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 200 mJ
Pulsed Drain Current-Max (IDM) 6A
Drain to Source Breakdown Voltage 1kV
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 1.5A
Turn-Off Delay Time 20 ns
Fall Time (Typ) 18 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 19ns
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 25μA
Rds On (Max) @ Id, Vgs 11 Ω @ 1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 54W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 54W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Resistance 11Ohm
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code yes
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
Recommended For You
IXTP1N100+price,IXTP1N100+datasheet,IXTP1N100+in stock,buy+IXTP1N100,finder+IXTP1N100,IXTP1N100+tutorials,IXTP1N100+download