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Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 75V 90A TO-247AC
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Buying Options
Total Price: USD $3.18
Unit Price: USD $3.17965
≥1 USD $3.17965
≥10 USD $2.60965
≥100 USD $2.52795
≥500 USD $2.44625
≥1000 USD $2.36455
Inventory: 1258
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 19 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 4.5Ohm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Current Rating 90A
Number of Elements 1
Power Dissipation-Max 310W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 140 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 97 ns
Continuous Drain Current (ID) 90A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 170A
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 680A
Dual Supply Voltage 75V
Avalanche Energy Rating (Eas) 690 mJ
Recovery Time 61 ns
Nominal Vgs 4 V

Dimensions

Height 20.7mm
Length 15.87mm
Width 5.3086mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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