DS Breakdown Voltage-Min 12V
Drain-source On Resistance-Max 0.084Ohm
Drain Current-Max (Abs) (ID) 3A
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 3A
Turn-Off Delay Time 41 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 6V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Rds On (Max) @ Id, Vgs 84m Ω @ 1.5A, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 8.8 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ