IRFL1006PBF
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 1.6A SOT223
PDF
/
Buying Options
Total Price: USD $19.23
Unit Price: USD $19.2299
≥1 USD $19.2299
≥10 USD $15.77855
≥100 USD $15.2855
≥500 USD $14.79245
≥1000 USD $14.2994
Inventory: 1099
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Supplier Device Package SOT-223
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 220Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 1.6A
Number of Elements 1
Power Dissipation-Max 1W Ta
Power Dissipation 2.1W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.6A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Input Capacitance 160pF
Rds On Max 220 mΩ
Nominal Vgs 4 V
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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