IRFHM4234TRPBF
RoHS
/
Package 8-TQFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 20A PQFN
PDF
/
Buying Options
Total Price: USD $0.34
Unit Price: USD $0.3432
≥1 USD $0.3432
Inventory: 1127
Minimum: 1
-
+
Technical Details
Physical
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TQFN Exposed Pad
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series FASTIRFET?, HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 4.4MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 2.8W Ta 28W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 7.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1011pF @ 13V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 30 ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.3 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 63A
Pulsed Drain Current-Max (IDM) 270A
Avalanche Energy Rating (Eas) 39 mJ
Dimensions
Height 900μm
Length 3.3mm
Width 3.3mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
IRFHM4234TRPBF+price,IRFHM4234TRPBF+datasheet,IRFHM4234TRPBF+in stock,buy+IRFHM4234TRPBF,finder+IRFHM4234TRPBF,IRFHM4234TRPBF+tutorials,IRFHM4234TRPBF+download