FP35R12U1T4
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT, LOW POWER NTC, 1200V, 35A, PIM
PDF
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Buying Options
Total Price: USD $221.28
Unit Price: USD $221.276162
≥1 USD $221.276162
≥10 USD $208.751089
≥100 USD $196.934993
≥500 USD $185.787729
≥1000 USD $175.271444
Inventory: 1194
Minimum: 1
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Technical Details
Physical
Package / Case Module
Surface Mount NO
Number of Pins 23
Technical
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1
Number of Terminations 23
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 35
Qualification Status Not Qualified
Number of Elements 7
Configuration COMPLEX
Power Dissipation-Max 250W
Power Dissipation 250W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 1.85V
Turn On Time 43 ns
Collector Current-Max (IC) 54A
Turn Off Time-Nom (toff) 510 ns
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.25 V
Compliance
RoHS Status RoHS Compliant
Lead Free Contains Lead
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