IRFHM3911TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 10A PQFN
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Buying Options
Total Price: USD $0.7
Unit Price: USD $0.704
≥1 USD $0.704
≥10 USD $0.60984
≥100 USD $0.422136
≥500 USD $0.352739
≥1000 USD $0.300203
≥3000 USD $0.26737
Inventory: 34279
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 92mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 29W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 115m Ω @ 6.3A, 10V
Vgs(th) (Max) @ Id 4V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 20A
Threshold Voltage 4V
Drain Current-Max (Abs) (ID) 3.2A
Pulsed Drain Current-Max (IDM) 36A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 41 mJ
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Alternative Model
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