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IPD50R950CEAUMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET CONSUMER
PDF
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Buying Options
Total Price: USD $8.59
Unit Price: USD $8.5918
≥1 USD $8.5918
≥10 USD $7.04995
≥100 USD $6.82955
≥500 USD $6.60915
≥1000 USD $6.38875
Inventory: 1340
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Package / Case TO-252-3
Number of Pins 3

Technical

Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 34W
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 34W
Turn On Delay Time 7 ns
Transistor Application SWITCHING
Halogen Free Halogen Free
Rise Time 4.9ns
Drain to Source Voltage (Vdss) 500V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 19.5 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 4.3A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 12.8A
Input Capacitance 231pF
Avalanche Energy Rating (Eas) 68 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 950mOhm
Rds On Max 950 mΩ

Dimensions

Height 2.41mm
Length 6.73mm
Width 6.22mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

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