IRFH8318TR2PBF
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 21A 5X6 PQFN
PDF
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Buying Options
Total Price: USD $1.94
Unit Price: USD $1.935153
≥1 USD $1.935153
≥10 USD $1.825617
≥100 USD $1.722274
≥500 USD $1.624789
≥1000 USD $1.532821
Inventory: 1143
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5mm
Length 5.85mm
Height 1.17mm
Technical
Nominal Vgs 1.8 V
Rds On Max 3.1 mΩ
Drain to Source Resistance 3.1mOhm
Recovery Time 24 ns
Input Capacitance 3.18nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.8V
Continuous Drain Current (ID) 27A
Turn-Off Delay Time 18 ns
Fall Time (Typ) 12 ns
Drain to Source Voltage (Vdss) 30V
Rise Time 33ns
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Current - Continuous Drain (Id) @ 25°C 27A Ta 120A Tc
Input Capacitance (Ciss) (Max) @ Vds 3180pF @ 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Rds On (Max) @ Id, Vgs 3.1mOhm @ 20A, 10V
FET Type N-Channel
Turn On Delay Time 15 ns
Power Dissipation 3.6W
Element Configuration Single
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.6W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 3.1MOhm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2008
Packaging Cut Tape (CT)
Physical
Supplier Device Package PQFN (5x6)
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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