IRFB3607PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 80A TO-220AB
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Buying Options
Total Price: USD $0.58
Unit Price: USD $0.5814
≥1 USD $0.5814
≥10 USD $0.4769
≥100 USD $0.4617
≥500 USD $0.44745
≥1000 USD $0.43225
≥1000 USD $0.3876
Inventory: 128638
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.82mm
Length 10.6426mm
Height 9.017mm
Technical
Nominal Vgs 4 V
Recovery Time 50 ns
Dual Supply Voltage 75V
Drain to Source Breakdown Voltage 75V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 43 ns
Fall Time (Typ) 96 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 110 ns
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 3070pF @ 50V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 9m Ω @ 46A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 16 ns
Case Connection DRAIN
Power Dissipation 140W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 140W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 9MOhm
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 2008
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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