Avalanche Energy Rating (Eas) 97 mJ
Pulsed Drain Current-Max (IDM) 190A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0035Ohm
Drain Current-Max (Abs) (ID) 76A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 24A
Turn-Off Delay Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 24A Ta 76A Tc
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 15V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Rds On (Max) @ Id, Vgs 3.5m Ω @ 24A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.1W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ