IRFZ34NS
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 29A D2PAK
PDF
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Buying Options
Total Price: USD $1.16
Unit Price: USD $1.16185
≥1 USD $1.16185
≥10 USD $0.95285
≥100 USD $0.9234
≥500 USD $0.89395
≥1000 USD $0.86355
≥1000 USD $0.77425
Inventory: 1101
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 130 mJ
DS Breakdown Voltage-Min 55V
Pulsed Drain Current-Max (IDM) 100A
Drain-source On Resistance-Max 0.04Ohm
Drain Current-Max (Abs) (ID) 29A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 55V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 40m Ω @ 16A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.8W Ta 68W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 225
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series HEXFET?
Published 1997
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Alternative Model
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