IRFH7932TR2PBF
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 24A PQFN56
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5.1054mm
Length 5mm
Height 939.8μm
Technical
Nominal Vgs 1.8 V
Rds On Max 3.3 mΩ
Drain to Source Resistance 3.3mOhm
Recovery Time 32 ns
Input Capacitance 4.27nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.8V
Continuous Drain Current (ID) 24A
Turn-Off Delay Time 23 ns
Fall Time (Typ) 20 ns
Drain to Source Voltage (Vdss) 30V
Rise Time 48ns
Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 24A Ta 104A Tc
Input Capacitance (Ciss) (Max) @ Vds 4270pF @ 15V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V
FET Type N-Channel
Turn On Delay Time 20 ns
Power Dissipation 3.1W
Element Configuration Single
Power Dissipation-Max 3.4W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 3.3MOhm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2008
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package PQFN (5x6) Single Die
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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