BSC014N03MSGATMA1
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 30V 30A 8-Pin TDSON T/R
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Buying Options
Total Price: USD $1.22
Unit Price: USD $1.222967
≥1 USD $1.222967
≥10 USD $1.153742
≥100 USD $1.08844
≥500 USD $1.026826
≥1000 USD $0.968701
Inventory: 1172
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 139W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 173nC @ 10V
Rise Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 340 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Alternative Model
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