UNR411L00A
RoHS
/
Package 3-SSIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
TRANS PREBIAS PNP 300MW NS-B1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 3-SSIP
Supplier Device Package NS-B1
Technical
Packaging Tape & Reel (TR)
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -50V
Max Power Dissipation 300mW
Current Rating -100mA
Power - Max 300mW
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Max Breakdown Voltage 50V
Frequency - Transition 80MHz
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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