IRFH5110TR2PBF
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 5X6 PQFN
PDF
/
Buying Options
Total Price: USD $1.48
Unit Price: USD $1.47725
≥1 USD $1.47725
≥10 USD $1.2122
≥100 USD $1.1742
≥500 USD $1.1362
≥1000 USD $1.0982
Inventory: 47986
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5mm
Length 5.9944mm
Height 838.2μm
Technical
Nominal Vgs 4 V
Rds On Max 12.4 mΩ
Drain to Source Resistance 12.4mOhm
Recovery Time 51 ns
Input Capacitance 3.152nF
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) 63A
Turn-Off Delay Time 22 ns
Fall Time (Typ) 6.4 ns
Drain to Source Voltage (Vdss) 100V
Rise Time 9.6ns
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Ta 63A Tc
Input Capacitance (Ciss) (Max) @ Vds 3152pF @ 25V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 12.4mOhm @ 37A, 10V
FET Type N-Channel
Turn On Delay Time 7.8 ns
Power Dissipation 114W
Element Configuration Single
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.6W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2010
Packaging Cut Tape (CT)
Physical
Supplier Device Package 8-PQFN (5x6)
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
Recommended For You
IRFH5110TR2PBF+price,IRFH5110TR2PBF+datasheet,IRFH5110TR2PBF+in stock,buy+IRFH5110TR2PBF,finder+IRFH5110TR2PBF,IRFH5110TR2PBF+tutorials,IRFH5110TR2PBF+download