Resistor - Emitter Base (R2) 10k Ω
Resistor - Base (R1) 10k Ω
Frequency - Transition 250MHz
Transition Frequency 250MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Current - Collector Cutoff (Max) 500nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 300mV
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Transistor Application SWITCHING
Configuration CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
Max Power Dissipation 150mW
Subcategory BIP General Purpose Small Signal
Additional Feature DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)