IRFH3707TR2PBF
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 12A PQFN33
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-PQFN (3x3)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 12.4MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.8W Ta
Element Configuration Single
Power Dissipation 2.8W
Turn On Delay Time 7.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 755pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta 29A Tc
Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 4.5V
Rise Time 11ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.6 ns
Turn-Off Delay Time 9.9 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 755pF
Recovery Time 30 ns
Drain to Source Resistance 12.4mOhm
Rds On Max 12.4 mΩ
Nominal Vgs 1.8 V
Dimensions
Height 939.8μm
Length 2.9972mm
Width 2.9972mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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