IRFBA1404PPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-273AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 206A SUPER-220
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Total Price: USD $1.5
Unit Price: USD $1.496
≥1 USD $1.496
Inventory: 341
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 5mm
Length 10.9982mm
Height 15mm
Technical
Avalanche Energy Rating (Eas) 480 mJ
Pulsed Drain Current-Max (IDM) 650A
Drain to Source Breakdown Voltage 40V
Drain Current-Max (Abs) (ID) 95A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 206A
Turn-Off Delay Time 72 ns
Fall Time (Typ) 26 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 140 ns
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Current - Continuous Drain (Id) @ 25°C 206A Tc
Input Capacitance (Ciss) (Max) @ Vds 7360pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 3.7m Ω @ 95A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 17 ns
Case Connection DRAIN
Power Dissipation 300W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
Current Rating 206A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 40V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Resistance 3.7MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-273AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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