IRFU3706
RoHS
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Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 75A I-PAK
PDF
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Buying Options
Total Price: USD $4.75
Unit Price: USD $4.75285
≥1 USD $4.75285
≥10 USD $3.9007
≥100 USD $3.77815
≥500 USD $3.65655
≥1000 USD $3.53495
Inventory: 1075
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 88W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 10V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.009Ohm
Pulsed Drain Current-Max (IDM) 280A
DS Breakdown Voltage-Min 20V
Avalanche Energy Rating (Eas) 220 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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